Tunneling magnetoresistance device semiconductor junction device magnetic memory and semiconductor light-emitting device

摘要

A pin junction element ( 10 ) includes a ferromagnetic p-type semiconductor layer ( 11 ) and a n-type semiconductor layer ( 12 ) which are connected via an insulating layer ( 13 ), and which shows a tunneling magnetic resistance according to the magnetization of the ferromagnetic p-type semiconductor layer ( 11 ) and the magnetization of the ferromagnetic n-type semiconductor layer ( 12 ). In this pin junction element ( 10 ), an empty layer is formed with an applied bias, thereby generating tunnel current via an empty layer. As a result, it is possible to generate tunnel current even when adopting a thicker insulating layer than that of the conventional tunnel magnetic resistance element.