发明名称 |
Ultraviolet light-emitting device in which p-type semiconductor is used |
摘要 |
An object is to provide an ultraviolet light-emitting device in which a p-type semiconductor which has high conductivity and an emission peak in ultraviolet region, and emits light efficiently is used. The p-type semiconductor is prepared by supplying a p-type impurity raw material at the same time or after starting supply of predetermined types of crystal raw materials, besides before starting supply of other types of crystal raw materials than the predetermined types of crystal raw materials in one cycle wherein all the types of crystal raw materials of the plural types of crystal raw materials are supplied in one time each in case of making crystal growth by supplying alternately the plural types of crystal raw materials in a pulsed manner.
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申请公布号 |
US7309394(B2) |
申请公布日期 |
2007.12.18 |
申请号 |
US20030626661 |
申请日期 |
2003.07.25 |
申请人 |
RIKEN |
发明人 |
HIRAYAMA HIDEKI;IWAI SOHACHI;AOYAGI YOSHINOBU |
分类号 |
C23C16/34;C30B29/30;C23C16/455;H01L21/205;H01L33/32;H01S5/323 |
主分类号 |
C23C16/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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