| 摘要 |
<p>A non-volatile memory device, a manufacturing method of the same, and a manufacturing apparatus of the same are provided to obtain stable and uniform switching characteristics and operational characteristics by forming oxygen vacancy at a boundary of metal/oxide. A pressure control unit(1) controls pressure of gas. A gas inlet(2) is connected to a high-pressure annealing chamber(4) in order to receive the gas from the pressure control unit. A gas outlet(3) is connected to the high-pressure annealing chamber in order to control the internal pressure of the high-pressure annealing chamber by discharging the gas to the outside. The high-pressure annealing chamber is formed to perform a thermal process for a single crystalline oxide layer or a single crystalline oxide layer having upper and lower metal electrodes. A temperature controller(5) is connected to the high-pressure annealing chamber in order to adjust the temperature. A pressure monitor(6) is connected to the high-pressure annealing chamber in order to monitor the internal pressure of the high-pressure annealing chamber. A computer(7) is connected to a pressure monitor and a temperature controller in order to control the internal pressure and the internal temperature of the high-pressure annealing chamber.</p> |
