| 发明名称 |
Laser annealing of complex metal oxides (CMO) memory materials for non-volatile memory integrated circuits |
| 摘要 |
A method is disclosed to effectively achieve a low deposition temperature of CMO memory materials by depositing the CMO memory material at relatively low temperatures that give an amorphous film, then to later melt and re-crystallize the CMO memory material with a laser (laser annealing). |
| 申请公布号 |
US7309616(B2) |
申请公布日期 |
2007.12.18 |
| 申请号 |
US20030387799 |
申请日期 |
2003.03.13 |
| 申请人 |
UNITY SEMICONDUCTOR CORPORATION |
发明人 |
NAGASHIMA MAKOTO;RINERSON DARRELL;HISA STEVE KUO-REN |
| 分类号 |
H01L21/00;C23C14/58;H01L21/316;H01L45/00 |
主分类号 |
H01L21/00 |
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