发明名称 MAGNETORESISTANCE DEVICE
摘要 A magneto-resistive device is provided to detect a magnetic field passing along a crystalline growth axis(z-axis) vertical to the plane connected to a channel and a classifying unit. A magneto-resistive device(1) includes a channel(2), a conductor(6), and a plurality of leads(81,82,83,84,85,86). The channel includes a non-ferromagnetic semiconductor material and is elongated from a first termination(3) to a second termination(4). The conductor includes a non-ferromagnetic material with higher conductivity than the semiconductor material, and connects more than two sections of the channel. The plurality of leads is connected to the channel and becomes distant along the channel. The channel is an elongate channel.
申请公布号 KR20070118937(A) 申请公布日期 2007.12.18
申请号 KR20060119234 申请日期 2006.11.29
申请人 KABUSHIKI KAISHA HITACHI SEISAKUSHO(D/B/A HITACHI, LTD.) 发明人 WILLIAMS DAVID;WUNDERLICH JORG;TROUP ANDREW;HASKO DAVID
分类号 G11C11/15 主分类号 G11C11/15
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