发明名称 |
Semiconductor device including MOS field effect transistor having offset spacers or gate sidewall films on either side of gate electrode and method of manufacturing the same |
摘要 |
First and second impurity doped regions are formed in a semiconductor substrate. A first gate electrode is formed on the first impurity doped region with a first gate insulation film interposed therebetween. A second gate electrode is formed on the second impurity doped region with a second gate insulation film interposed therebetween. A first sidewall insulation film is formed on either side of the first gate electrode. A second sidewall insulation film has a thickness different from that of the first sidewall insulation film and are formed on either side of the second gate electrode. A third sidewall insulation film is formed on the first sidewall insulation film on the side of the first gate electrode. A fourth sidewall insulation films have a thickness different from that of the third sidewall, insulation film and are formed on the second sidewall insulation film on the side of the second gate electrode.
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申请公布号 |
US7309633(B2) |
申请公布日期 |
2007.12.18 |
申请号 |
US20050106472 |
申请日期 |
2005.04.15 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
TSUNO HITOSHI |
分类号 |
H01L21/336;H01L27/092;H01L21/8238;H01L29/78 |
主分类号 |
H01L21/336 |
代理机构 |
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主权项 |
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地址 |
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