发明名称 |
Semiconductor element and semiconductor memory device using the same |
摘要 |
A field-effect semiconductor element implemented with a fewer number of elements and a reduced area and capable of storing data by itself without need for cooling at a cryogenic temperature, and a memory device employing the same. Gate-channel capacitance is set so small that whether or not a trap captures one electron or hole can definitely and distinctively be detected in terms of changes of a current of the semiconductor FET element. By detecting a change in a threshold voltage of the semiconductor element brought about by trapping of electron or hole in the trap, data storage can be realized at a room temperature.
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申请公布号 |
US7309892(B2) |
申请公布日期 |
2007.12.18 |
申请号 |
US20060439152 |
申请日期 |
2006.05.24 |
申请人 |
HITACHI, LTD. |
发明人 |
YANO KAZUO;ISHII TOMOYUKI;HASHIMOTO TAKASHI;SEKI KOICHI;AOKI MASAKAZU;SAKATA TAKESHI;NAKAGOME YOSHINOBU;TAKEUCHI KAN |
分类号 |
H01L21/8247;H01L29/76;G11C11/22;G11C11/404;G11C16/02;G11C16/04;G11C16/28;H01L21/28;H01L21/336;H01L27/01;H01L27/115;H01L29/423;H01L29/51;H01L29/66;H01L29/788;H01L29/792;H01L29/94;H01L31/036;H01L31/062;H01L31/112;H01L31/113 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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地址 |
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