EXPOSURE MASK OF SEMICONDUCTOR DEVICE

摘要

An exposure mask of a semiconductor device is provided to achieve an ultra micro pattern for a semiconductor device and to prevent the proximity effect by changing the refraction rate of an incident light forcibly to decrease a diffraction angle. A first pattern(115) is formed on a transparent substrate(100). A second pattern(120) is formed with a scratch type at a lower portion of the transparent substrate by using a laser or a FIB. The first pattern is made of chrome. The first pattern is a line/space pattern.