发明名称 |
Method and apparatus for forming a film on a substrate |
摘要 |
This invention relates to a method and apparatus for forming a film on the substrate. The method comprises supplying to the chamber in gaseous or vapor form a silicon containing organic compound and an oxidizing agent in the presence of a plasma to deposit a film on the substrate and setting the film such that carbon containing groups are retained therein. In particular embodiments the setting is achieved by exposing the film to H<SUB>2 </SUB>plasma.
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申请公布号 |
US7309662(B1) |
申请公布日期 |
2007.12.18 |
申请号 |
US20000763641 |
申请日期 |
2000.06.26 |
申请人 |
AVIZA EUROPE LIMITED |
发明人 |
GILES KATHERINE;BEEKMANN KNUT;DOBSON CHRISTOPHER DAVID;MACNEIL JOHN;WILBY ANTONY PAUL |
分类号 |
C23C16/42;H01L21/31;C23C16/40;C23C16/50;C23C16/56;H01L21/3105;H01L21/311;H01L21/316;H01L21/469 |
主分类号 |
C23C16/42 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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