| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for suppressing generation of a defect called as a void or a blister, even in a pasted wafer having a smaller thickness of an oxide film than that of a conventional one. SOLUTION: An oxide film having a thickness of 50 nm or less is formed on a wafer for an active layer used for forming a silicon layer, hydrogen ions are implanted into the wafer for the active layer to form a hydrogen ion implantation layer, and after that, ions other than hydrogen ions are implanted into a position in which the depth from a surface of the ion implantation side is shallower than that of the hydrogen ion implantation layer. The wafer for the active layer and a wafer for a supporting substrate are then pasted via the oxide film, and they are peeled off from each other in the hydrogen ion implantation layer. COPYRIGHT: (C)2008,JPO&INPIT
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