| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device with which flatness can be improved in a polishing face by a CMP method. SOLUTION: The method includes a step of forming a concave part 1a in a semiconductor substrate 1, a step of forming an insulating film 2 in the concave part 1a and on the semiconductor substrate 1, a step of applying etching liquid 51 onto the insulating film 2 positioned on the semiconductor substrate 1 by using an ink jet-type head 50 and removing a part of the insulating film 2, and a step of burying an element separation film 2a in the concave part 1a by polishing and removing the insulating film 2 remaining on the semiconductor substrate 1 by the CMP method. COPYRIGHT: (C)2008,JPO&INPIT
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