发明名称 TEMPLATE SUBSTRATE
摘要 PROBLEM TO BE SOLVED: To provide a template substrate with an improved manufacturing efficiency and its manufacturing method, and also to provide a template substrate suppressed with the occurrence of large warping; and to provide its manufacturing method. SOLUTION: In the template substrate made by stacking crystal layers consisting of a nitride semiconductor on a substrate formed of a material different from the nitride semiconductor; the crystal layers contain a crystal formed by lateral growth, and the crystal formed by the lateral growth contains an Mg-contained crystal. The addition of Mg has an effect of accelerating the lateral growth of the nitride semiconductor crystal. By adding Mg to the nitride semiconductor crystal to be grown laterally when manufacturing the template substrate; the time required for the nitride semiconductor crystal to cover the surface of the substrate in layer is shortened, and a growing speed of the crystal becomes small in the thickness direction with respect to a growing speed in the lateral direction. Consequently, the surface of the substrate formed of the material different from the nitride semiconductor can be covered in layer by a nitride semiconductor crystal having a smaller thickness. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2007317752(A) 申请公布日期 2007.12.06
申请号 JP20060143448 申请日期 2006.05.23
申请人 MITSUBISHI CABLE IND LTD 发明人 OKAGAWA HIROAKI;HIRAOKA SUSUMU
分类号 H01L21/205 主分类号 H01L21/205
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