| 摘要 |
In relation to the conventional semiconductor device provided with a plurality of FETS, there is room for improving the pair accuracy of the FET-pair. A semiconductor device includes a first FET, a second FET, a third FET and a fourth FET. The four FETs are provided in an active region (certain region). The four have each of gate electrodes, respectively. Each of the gate electrodes are arranged along a circle in this sequence in plan view. The four FETs have the substantially same geometry.
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