| 摘要 |
PROBLEM TO BE SOLVED: To provide a template substrate which is improved in the production efficiency and a method for producing the same, and to provide a template substrate in which the generation of a large warp is prevented and a method for producing the same. SOLUTION: When the template substrate with a crystal layer consisting of a nitride semiconductor, laminated on a different kind of substrate, is produced, the crystal growth surface of the different kind of substrate is partially covered with a mask for selective growth, and a nitride semiconductor crystal is grown above the mask in the lateral direction so as to enlarge the area of the crystal formed by the lateral direction growth. At this time, the mask is formed from a Mg compound. Even if the mask is deteriorated when the nitride semiconductor crystal is grown, the lateral direction growth of the nitride semiconductor crystal is not suppressed because Mg for facilitating the lateral direction growth of the crystal is discharged from the mask formed from the Mg compound. COPYRIGHT: (C)2008,JPO&INPIT
|
