发明名称 |
High density magnetic memory cell layout for spin transfer torque magnetic memories utilizing donut shaped transistors |
摘要 |
A method and system for providing and using a magnetic storage cell and magnetic memory is described. The method and system include providing a magnetic element and providing a selection device. The magnetic element is programmable to a first state by a first write current driven through the magnetic element in a first direction and to a second state by a second write current driven through the magnetic element in a second direction. The selection device is connected with the magnetic element. The selection device includes a gate having an aperture therein. The selection device is configured such that the first write current and second write current are provided to the magnetic element across the aperture.
|
申请公布号 |
US2007279967(A1) |
申请公布日期 |
2007.12.06 |
申请号 |
US20060436446 |
申请日期 |
2006.05.18 |
申请人 |
LUO XIAO;WANG LIEN-CHANG |
发明人 |
LUO XIAO;WANG LIEN-CHANG |
分类号 |
H01L29/76;G11C11/00;G11C11/14;H01L29/94;H01L31/00 |
主分类号 |
H01L29/76 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|