发明名称 Semiconductor device and method for manufacturing the same
摘要 A semiconductor device includes a semiconductor substrate, a first wire disposed on the semiconductor substrate, an first insulating layer disposed on the semiconductor substrate and the wire, a first thin film resistor having a first resistance within a predetermined error range, and a second thin film resistor having a second resistance which is allowable to be out of the predetermined error range. A surface of the first insulating layer includes a first area and a second area, in which the second area is located adjacent to the first wire. The first thin film resistor is disposed in the first area, and the second thin film resistor is disposed in the second area.
申请公布号 US2007279272(A1) 申请公布日期 2007.12.06
申请号 US20070806326 申请日期 2007.05.31
申请人 DENSO CORPORATION 发明人 SOBUE SATOSHI;BAN HIROYUKI
分类号 H03M1/78 主分类号 H03M1/78
代理机构 代理人
主权项
地址