| 发明名称 |
METHOD FOR HEAT TREATING SINGLE CRYSTAL |
| 摘要 |
The present invention provides a method for heat treating a single crystal, comprising a step of heating a single crystal of a specific cerium-activated orthosilicate compound in an oxygen-containing atmosphere.
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| 申请公布号 |
US2007277726(A1) |
申请公布日期 |
2007.12.06 |
| 申请号 |
US20070755787 |
申请日期 |
2007.05.31 |
| 申请人 |
USUI TATSUYA;SHIMURA NAOAKI;KURATA YASUSHI;KURASHIGE KAZUHISA |
发明人 |
USUI TATSUYA;SHIMURA NAOAKI;KURATA YASUSHI;KURASHIGE KAZUHISA |
| 分类号 |
C30B5/00 |
主分类号 |
C30B5/00 |
| 代理机构 |
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