METHOD FOR FABRICATING SEMICONDUCTOR DEVICES

摘要

A method for manufacturing a semiconductor device is provided to compensate for photoresist patterns by adjusting the thickness of a polymer layer formed on a photoresist pattern based on the position of a to-be-etched layer. Photoresist patterns are formed on a to-be-etched layer(S11). By reacting selectively the photoresist patterns using reaction gas, a polymer layer having different thicknesses based on the position of the photoresist patterns is formed(S12). The to-be-etched layer is etched by using the photoresist patterns and the polymer layer as an etch mask(S13). The polymer layer having the different thicknesses has relatively thick portions on the photoresist patterns, which is positioned at an edge of the to-be-etched layer.