THIN FILM TRANSISTOR FORMED ON FLEXIBLE SUBSTRATE AND METHOD OF MANUFACTURING THE SAME

摘要

A thin film transistor formed on a flexible substrate and a manufacturing method thereof are provided to form uniformly offset regions into each device respectively by forming the offset region between dual gates, even if a mis-alignment exists. A polysilicon layer(44) including a source and a drain regions is formed on a flexible substrate(40). A gate stack(S) is formed on a channel region of the polysilicon layer. The gate stack comprises a first gate stack(S1) and a second gate stack(S2), and an offset region is exposed between the first and the second gate stacks.