METHOD FOR REDUCING A RESET CURRENT FOR RESETTING A PORTION OF A PHASE CHANGE MATERIAL IN A MEMORY CELL OF A PHASE CHANGE MEMORY DEVICE AND THE PHASE CHANGE MEMORY DEVICE

摘要

A phase change memory device and a method for reducing a reset current for resetting a part of phase change materials within a memory cell of the phase change memory device are provided to increase resistance difference between a set state and a reset state of the phase change memory cell. When performing an initial firing method(300) of a phase change memory device, one of a plurality of memory blocks is selected(310). A plurality of selected word lines of the memory array blocks are enabled sequentially(320). A firing current is added to a plurality of bit lines of the selected cell array blocks(330). At this time, the firing current is larger than the reset current, thereby resetting the phase change material.