| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a resist protective coating material suitable for immersion exposure and a pattern-forming method. <P>SOLUTION: The resist protective coating material comprises an 8-12C ether compound as a solvent. A resist protective coating formed on a resist film using the resist protective coating material is water-insoluble, soluble in an alkaline aqueous solution (alkaline developer), and unmixable with the resist film, and thus good immersion lithography can be performed. During alkaline development, development of the resist film and removal of the protective coating can be achieved in a single step at the same time. <P>COPYRIGHT: (C)2008,JPO&INPIT |
