| 摘要 |
A nonvolatile semiconductor storage device includes a semiconductor substrate, and at least one memory cell formed on the semiconductor substrate, the at least one memory cell having a gate electrode unit in which a floating gate electrode and a control gate electrode are stacked, at least part of the control gate electrode being silicidated. The nonvolatile semiconductor storage device further includes at least one dummy transistor formed on the semiconductor substrate, the at least one dummy transistor having a first dummy electrode, and a second dummy electrode which has a current leakage path and which is stacked on the first dummy electrode.
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