发明名称 METHOD AND APPARATUS TO IMPROVE LITHOGRAPHY THROUGHPUT
摘要 The present disclosure provides a lithography apparatus with improved lithography throughput. The lithography apparatus includes a first lens system; a first substrate stage configured to receive a first radiation energy from the first lens system, and designed operable to move a substrate during an exposing process; a second lens system, having a higher resolution than that of the first lens system; and a second substrate stage approximate to the first substrate stage and configured to receive a second radiation energy from the second lens system, and designed operable to receive the substrate from the first substrate stage and move the substrate.
申请公布号 US2007278424(A1) 申请公布日期 2007.12.06
申请号 US20060421590 申请日期 2006.06.01
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 LIN CHIN-HSIANG;PENG JUI-CHUNG;CHEN YUNG-CHENG;LIN SHY-JAN
分类号 G03F7/20 主分类号 G03F7/20
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