| 摘要 |
Methods for forming metal silicates as high-k dielectrics in electronic devices are provided to overcome a problem that growth rates of the atomic layer deposition process are very low by supplying metal, silicon, and oxygen sources simultaneously into a deposition chamber in the chemical vapor deposition. As a method for forming a metal silicate as a high-k dielectric in an electronic device, the method comprises the steps of: supplying diethylsilane to a reaction zone; simultaneously supplying an oxygen source to the reaction zone; simultaneously supplying a metal precursor to the reaction zone; reacting the diethylsilane, oxygen source and metal precursor by chemical vapor deposition to form a metal silicate on a substrate comprising the electronic device. The metal precursor is selected from the group consisting of metal amide, metal alkoxide and a mixture thereof. The metal is selected from the group consisting of hafnium, zirconium, and a mixture thereof. The oxygen source is selected from the group consisting of oxygen gas, air, ozone, and mixtures thereof. The diethylsilane, oxygen source and metal precursor are reacted under chemical vapor deposition conditions. The chemical vapor deposition conditions include a pressure range of 0.5 to 2 Torr, and a temperature range of 250 to 450 deg.C.
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