| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a slurry for adequately polishing both copper and tantalum and a chemical mechanical polishing method using the same in the chemical mechanical polishing of a semiconductor substrate containing both copper and tantalum. <P>SOLUTION: The substrate containing copper and tantalum or tantalum nitride, or both tantalum and tantalum nitride is polished using a chemical mechanical polishing slurry including at least a polishing material, an oxidant, a complexing agent, at least a film forming agent, and acetic acid, wherein the mass ratio of the oxidant for acetic acid is at least 10 or larger. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
