发明名称 |
INTERCONNECTION STRUCTURE WITH IMPROVED ADHESION BETWEEN NOBLE METAL LINER AND ADJACENT DIELECTRIC MATERIAL, AND ITS MANUFACTURING METHOD (IMPROVEMENT IN ADHESION FOR METAL/DIELECTRIC INTERFACE) |
摘要 |
PROBLEM TO BE SOLVED: To provide an interconnection structure with improved adhesion between a noble metal liner and dielectric material adjacent thereto. SOLUTION: The structure relates to the interconnection structure with improved adhesion between a chemically etched dielectric material and a noble metal liner, as well as a method for manufacturing the structure. The structure includes a step of processing the chemically etched dielectric material to change chemical properties of the dielectric material so that the processed surface can become hydrophobic. The processing step is carried out before deposition of the noble metal liner, whereby the adhesion between the chemically etched dielectric material and the noble metal liner can be improved. COPYRIGHT: (C)2008,JPO&INPIT |
申请公布号 |
JP2007318141(A) |
申请公布日期 |
2007.12.06 |
申请号 |
JP20070135218 |
申请日期 |
2007.05.22 |
申请人 |
INTERNATL BUSINESS MACH CORP <IBM> |
发明人 |
LIN QINGHUANG;YANG CHIH-CHAO;SPOONER TERRY A;GRISELDA BONILLA |
分类号 |
H01L21/768;H01L21/312;H01L21/316;H01L21/3205;H01L23/52 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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