| 摘要 |
The GaN facet growth method produces defect accumulating regions H on masks by forming a dotmask or a stripemask on an undersubstrate, growing GaN in a reaction furnace in vapor phase, inducing GaN crystals on exposed parts without covering the masks, inviting facets starting from verges of the masks and producing defect accumulating regions H on the mask. The defect accumulating regions H have four versions, that is, non (O), polycrystal (P), c-axis inclining single crystal (A) and orientation inversion (J). The best is the orientation inversion region (J). A sign of occurrence of the orientation inversion regions (J) is beaks of inversion orientation appearing on facets. GaN is grown on a masked undersubstrate by supplying a carbon material at a hydrocarbon partial pressure of 10 Pa to 5 kPa for 0.5 hour to 2 hour by an HVPE facet growth method without burying facets.
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