| 摘要 |
Semiconductor component that contains Al<SUB>x</SUB>Ga<SUB>y</SUB>In<SUB>1-x-y</SUB>As<SUB>z</SUB>Sb<SUB>1-z</SUB>, whereby the parameters x, y, and z are selected such that a bandgap of less than 350 meV is achieved, whereby it features a mesa-structuring and a passivation layer containing Al<SUB>n</SUB>Ga<SUB>1-n</SUB>As<SUB>m</SUB>Sb<SUB>1-m </SUB>is applied at least partially on at least one lateral surface of the structuring, and the parameter n is selected in the range of 0.4 to 1 and the parameter m in the range of 0 to 1.
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