发明名称 Semiconductor Device Stack and Method for Its Production
摘要 A semiconductor stack and a semiconductor base device with a wiring substrate and an intermediate wiring board for a semiconductor device stack is disclosed. In one embodiment, a semiconductor chip is arranged between the intermediate wiring board and the wiring substrate which is electrically connected by way of the wiring substrate on the one hand to external contacts on the underside of the wiring substrate and on the other hand to contact terminal areas in the edge regions of the wiring substrate. The intermediate wiring board has angled-away external flat conductors, which are electrically connected in the contact terminal areas of the wiring board. Furthermore, on the upper side of the intermediate wiring board, arranged on the free ends of the internal flat conductors are external contact terminal areas, which correspond in size and arrangement to external contacts of a semiconductor device to be stacked.
申请公布号 US2007278639(A1) 申请公布日期 2007.12.06
申请号 US20050572873 申请日期 2005.07.21
申请人 INFINEON TECHNOLOGIES AG 发明人 BAUER MICHAEL;BACHMAIER ULRICH;HAGEN ROBERT-CHRISTIAN;POHL JENS;STEINER RAINER;VILSMEIER HERMANN;WOERNER HOLGER;ZUHR BERNHARD
分类号 H01L23/02;H01L21/00;H01L23/48;H01L25/065 主分类号 H01L23/02
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