PLASMA CVD METHOD, METHOD FOR FORMING SILICON NITRIDE FILM, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND PLASMA CVD METHOD

摘要

A plasma processing apparatus is provided with a process chamber which can be vacuumized; a placing table for placing a subject to be processed in the processing chamber; a microwave generating source for generating microwaves; a planar antenna, which has a plurality of slots and introduces the microwaves generated by the microwave generating source into the process chamber through the slots; a gas supply mechanism for supplying a film forming material gas into the process chamber; and a high-frequency power supply for supplying the placing table with high-frequency power. By using such plasma processing apparatus, a nitrogen containing gas and a silicon containing gas introduced into the process chamber are brought into the plasma state, and at the time of depositing a silicon nitride film on the surface of the substrate by the plasma, the placing table is supplied with high-frequency power.