METHOD OF FORMING A PATTERN IN SEMICONDUCTOR DEVICE AND METHOD OF FORMING A CELL PATTERN IN NON-VOLATILE MEMORY USING THE SAME

摘要

A method for forming a pattern of a semiconductor device and a method for forming a cell pattern of a non volatile memory using the same, are provided to prevent an insulating layer, a tunnel oxide layer and a dielectric from being damaged by forming a first and a second buffer layers to surround a circuit pattern. An insulating layer(104) including a first oxide and a conductive layer are formed on a substrate(100) sequentially. A mask pattern including a second oxide is formed on the conductive layer. A preliminary pattern is formed by patterning the mask pattern. A first buffer layer(116) is formed on the preliminary pattern. A space type second buffer layer(120) is formed on the first buffer layer. The first buffer layer and the mask pattern are removed. A pattern structure is formed by removing the second buffer layer.