| 发明名称 |
LIGHT EMITTING DIODES(LEDS) WITH IMPROVED LIGHT EXTRACTION BY ROUGHENING |
| 摘要 |
Systems and methods are disclosed for fabricating a semiconductor light emitting diode (LED) device by forming an n-gallium nitride (n-GaN) layer on the LED device; and roughening the surface of the n-GaN layer to extract light from an interior of the LED device. |
| 申请公布号 |
KR20070115869(A) |
申请公布日期 |
2007.12.06 |
| 申请号 |
KR20077015438 |
申请日期 |
2006.01.09 |
| 申请人 |
SEMILEDS CORPORATION |
发明人 |
DOAN TRUNG TRI;TRAN CHUONG ANH |
| 分类号 |
H01L33/00;H01L33/22 |
主分类号 |
H01L33/00 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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