发明名称 PIEZOELECTRIC THIN FILM AND DEVICE USING THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To provide a piezoelectric thin film which is free from lead and excellent in piezoelectric characteristics. <P>SOLUTION: The piezoelectric thin film 1 is formed on an electrode layer 12 and composed of a first alkali niobium oxide film 2 represented by formula, (Na<SB>x</SB>K<SB>y</SB>)NbO<SB>3</SB>(0<x<1, 0<y<1, x+y=1), and a second alkali niobium oxide film 3 which is formed on the first alkali niobium oxide film 2 and represented by formula, (Na<SB>x</SB>K<SB>y</SB>Li<SB>z</SB>)NbO<SB>3</SB>(0<x<1, 0<y<1, 0<z<1, x+y+z=1). <P>COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2007317853(A) 申请公布日期 2007.12.06
申请号 JP20060145432 申请日期 2006.05.25
申请人 HITACHI CABLE LTD 发明人 OKA FUMITO;SHIBATA KENJI
分类号 H01L41/187;B41J2/045;B41J2/055;B41J2/135;B41J2/14;B41J2/16;H01L41/09;H01L41/18;H01L41/22;H01L41/316;H01L41/319 主分类号 H01L41/187
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