| 摘要 |
PROBLEM TO BE SOLVED: To provide a method where the sintering properties and production conditions of the tungsten powder to be used are improved, thus a tungsten target for sputtering having high density, a fine crystal structure, and remarkably improved deflective strength which have not been able to attain only by the conventional press sintering process is created, thereby the generation of the defect in particles on film deposition by sputtering is suppressed, and the tungsten target can be stably produced at a low cost. SOLUTION: Regarding the method for producing a tungsten sintered compact target for sputtering, tungsten powder having a powder specific surface area ratio of≥0.4 m<SP>2</SP>/g äBET (Brunauer-Emett-Teller) process} is subjected to hot press sintering at a pressurization starting temperature of≤1,200°C in a vacuum or in a reducing atmosphere and is further subjected to hot isostatic press (HIP) sintering. COPYRIGHT: (C)2008,JPO&INPIT
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