Semiconductor Laser Device and Manufacturing Method Thereof

摘要

A semiconductor laser device ( 1 ) includes: a substrate ( 3 ) having a principal plane ( 3 a); a photonic crystal layer ( 7 ) having an epitaxial layer ( 2 a) of gallium nitride formed on substrate ( 3 ) in a direction in which principal plane ( 3 a) extends and a low refractive index material ( 2 b) having a refractive index lower than that of epitaxial layer ( 2 a); an n-type clad layer ( 4 ) formed on substrate ( 3 ); a p-type clad layer ( 6 ) formed on substrate ( 3 ); an active layer ( 5 ) that is interposed between n-type clad layer ( 4 ) and p-type clad layer ( 6 ) and emits light when a carrier is injected thereinto; and a GaN layer ( 12 ) that covers a region directly on photonic crystal layer ( 7 ). Thus, the semiconductor laser device can be manufactured without fusion.