SEMICONDUCTOR TRANSISTORS WITH EXPANDED TOP PORTIONS OF GATES

摘要

A semiconductor transistor (100) with an expanded top portion of a gate and a method for forming the same. The semiconductor transistor (100) with an expanded top portion of a gate includes (a) a semiconductor region (110)which includes a channel region and first and second source/drain regions (840 and 850); the channel region is disposed between the first and second source/drain regions (840 and 850), (b) a gate dielectric region (411) in direct physical contact with the channel region, and (c) a gate electrode region (510) which includes a top portion (512) and a bottom portion (515). The bottom portion (515) is in direct physical contact with the gate dielectric region (411). A first width (517) of the top portion (512) is greater than a second width (516) of the bottom portion (515). The gate electrode region (510) is electrically insulated from the channel region by the gate dielectric region (411).