发明名称 |
Thin film transistor substrate and method of manufacturing thereof |
摘要 |
A thin film transistor substrate and a method of manufacturing the thin film transistor substrate comprises forming a gate line and a data line intersecting each other with a gate insulating layer interposed and defining a pixel area on the substrate, a thin film transistor electrically connected to the gate line and the data line, and a stepped-structure occurring pattern overlapping at least one of the gate line and the data line; forming a passivation layer having a stepped-structure portion formed by the stepped-structure occurring pattern on the substrate; forming a photoresist pattern having a second stepped-structure portion corresponding to the stepped-structure portion on the passivation layer; patterning the passivation layer using the photoresist pattern as a mask; forming a transparent conductive layer on the substrate; and removing the photoresist pattern where the transparent conductive layer is covered by a stripper penetrating through the stepped-structure portion of the photoresist pattern and forming a pixel electrode connected to the thin film transistor. |
申请公布号 |
US2007278487(A1) |
申请公布日期 |
2007.12.06 |
申请号 |
US20070706012 |
申请日期 |
2007.02.12 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHOUNG JONG HYUN;PARK HONG SICK;HONG SUN YOUNG;KIM BONG KYUN;SHIN BONG KYU;SHIN WON SUK;LEE BYEONG JIN |
分类号 |
H01L33/00 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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