发明名称 RECTANGULAR NITRIDE SEMICONDUCTOR SUBSTRATE WITH IDENTIFIED INNER AND OUTER SURFACES
摘要 A mirror-polished obverse surface and a roughened reverse surface of the conventional GaN wafers have been discriminated by difference of roughness on the surfaces with human eyesight. The difference of the surfaces is rather ambiguous. Cracks/breaks and distortion of the wafers have been likely to occur because the roughness of the reverse surface is apt to bring fine particles. To discern an obverse from a reverse without making use of the difference of the surface roughness, the present invention provides an obverse/reverse discriminative rectangular nitride semiconductor wafer having a longer slanting edge and a shorter slanting edge at obversely-clockwise neighboring comers, or having an asymmetric slanting edge at a comer, or having asymmetrically bevelled parts or having discriminating characters marked by laser. The present invention can make the reverse surface mirror-polished and smooth, so that particles on the reverse surface and distortion, cracks or breaks of the wafer decrease.
申请公布号 KR100783257(B1) 申请公布日期 2007.12.06
申请号 KR20050108856 申请日期 2005.11.15
申请人 发明人
分类号 C30B29/38;H01S5/30;C30B33/00;H01L21/02;H01L21/304;H01L23/544 主分类号 C30B29/38
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