发明名称 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To solve the following problem wherein: a lower aligning mark can not be detected; and a pattern is hardly formed, when a metal film not transparent to visible light is interposed between the lower aligning mark and a photoresist. <P>SOLUTION: A configuration is set in such a manner that insulating films are located below the aligning mark, the aligning mark formed of an aligning mark and the multilayered insulating films having an enhanced level difference is previously formed in a mark hole in a self-aligned manner, and an object metal film is formed thereon. The metal film itself has a level difference reflecting the aligning mark, so that an exact aligning process can be carried out. <P>COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2007317845(A) 申请公布日期 2007.12.06
申请号 JP20060145330 申请日期 2006.05.25
申请人 ELPIDA MEMORY INC 发明人 SUZUKI ICHIJI
分类号 H01L21/3205;G03F9/00;H01L21/027;H01L21/768;H01L21/8242;H01L23/52;H01L27/108 主分类号 H01L21/3205
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