发明名称 SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device capable of dispensing a complicated process accompanying a thermal treatment, and forming resin posts different in height with excellent pattern accuracy. <P>SOLUTION: The semiconductor device manufacturing method includes: a first step of coating an insulating resin on a semiconductor substrate with an electrode arranged on one surface; a second step of pressurizing the side with irregularities of a template, including the irregularities formed by prescribed pattern on one surface against the insulating resin, so as to form an insulating resin layer which has an irregular pattern corresponding to the irregularities and step parts different in height; and a third step of forming a wiring layer, which is electrically connected to the electrode, on the insulating resin layer so as to cover at least a part of each step part. <P>COPYRIGHT: (C)2008,JPO&INPIT</p>
申请公布号 JP2007317857(A) 申请公布日期 2007.12.06
申请号 JP20060145483 申请日期 2006.05.25
申请人 FUJIKURA LTD 发明人 NISHIMURA HITOSHI
分类号 H01L23/12;H01L21/3205;H01L23/52 主分类号 H01L23/12
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