发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To stably operate an amplifier circuit by adjusting the parasitic resistance in the amplifier circuit through installation of a compensation resistor. SOLUTION: A semiconductor device is provided with a compensation resistor for compensating for the parasitic resistance in a current mirror circuit. The current mirror circuit has at least two thin film transistors. Each of the thin film transistors comprises: a channel formation region; an island-shaped semiconductor film having source or drain regions; a gate insulating film; a gate electrode; and source or drain electrodes. The compensation resistor compensates for the parasitic resistance of any one of the gate electrodes, the source electrode, and the drain electrode. In addition, the compensation resistor has a conductive layer containing the same material as that of the gate electrode, the source or drain electrodes, or the source or drain regions. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2007318094(A) 申请公布日期 2007.12.06
申请号 JP20070104380 申请日期 2007.04.12
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 HIROSE ATSUSHI
分类号 H01L21/822;H01L21/20;H01L21/3205;H01L21/8234;H01L23/52;H01L27/04;H01L27/06;H01L29/786 主分类号 H01L21/822
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