发明名称 METHOD OF FORMING FILM, FILM FORMING DEVICE AND MEMORY MEDIUM AS WELL AS SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide technology for obtaining fluorine addition carbon film excellent in leak characteristics, linear expansion coefficient, and mechanical strength. SOLUTION: The fluorine addition carbon film is formed by active species obtained by activating C<SB>5</SB>F<SB>8</SB>gas and hydrogen gas. Fluorine is coming-off together with hydrogen and is reduced in the fluorine addition carbon film whereby polymerization is promoted. Accordingly, the dangling bond of carbon in the fluorine addition carbon film is reduced whereby leak current is reduced. Further, the polymerization is promoted and the film becomes strong whereby the fluorine addition carbon film, large in mechanical strength such as hardness and elastic modulus or the like, can be obtained. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2007317872(A) 申请公布日期 2007.12.06
申请号 JP20060145620 申请日期 2006.05.25
申请人 TOKYO ELECTRON LTD 发明人 MATSUOKA TAKAAKI;HORIGOME MASAHIRO
分类号 H01L21/314;C23C16/26;H01L21/312 主分类号 H01L21/314
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