MEMORY DEVICES HAVING NANO-CELL STRUCTURE AND METHODS OF FABRICATION THE SAME

摘要

A memory device having a nano cell structure and a manufacturing method thereof are provided to compose a semiconductor nano structure and an information storing nano structure by using nano wires, so that a size of the nano cell structure is minimized. A nano cell structure(16) consists of a semiconductor nano structure(10) and an information storing nano cell structure(15). The information storing nano structure is connected to the one end of the semiconductor nano structure, to be self-aligned with the semiconductor nano structure. The semiconductor nano structure is composed by a first nano wire and a second semiconductor nano wire which have a different conduction type.