| 摘要 |
<p>A non volatile semiconductor memory device is provided to reduce a writing voltage and to improve a charge retention property by forming a charge storing layer to have a thin thickness using germanium compound, silicon nitride compound, having the insulating property. A semiconductor region comprises a channel formation region between a pair of impurity regions. A first insulating layer(16) is formed over the channel formation region. A plurality of layers containing different nitride compounds are formed over the first insulating layer. A control gate electrode(24) is formed over the plurality of layers, wherein one or more of the plurality of layers containing the different nitride compounds serve as a charge storage layer(20).</p> |
