| 摘要 |
A nonvolatile semiconductor device is provided to reduce generation of hot electrons caused by a tunnel current between bands in a cell unit connected to an unselected bit line, by changing write condition according to the position of a memory cell in the cell unit. A NAND string includes a serially connected memory cell. Two selection gate transistors are connected to each end of the NAND string. A write control circuit makes a first write condition for a selected cell different from a second write condition for the selected cell. The first write condition is that the selected cell is one of two memory cells adjacent to the two selection gate transistors, and the second write condition is that the selected cell is one of memory cells except the two memory cells adjacent to the two selection gate transistors. |
