| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a high-resolution resist material which has high sensitivity and high resolution to ArF excimer laser light, ensures small line edge roughness, and contains a polymer type acid generator which does not dissolve in water, causes little outgassing in EB and EUV exposure, and excels in heat stability and storage stability, and a pattern forming method using the resist material. <P>SOLUTION: The resist material is prepared by adding a high molecular compound comprising a repeating unit having a sulfonium salt represented by formula (1), wherein R<SP>1</SP>is H or a methyl group; R<SP>2</SP>is a phenylene group, -O-R<SP>6</SP>- or -C(=O)-Y-R<SP>6</SP>-, Y is O or NH, R<SP>6</SP>is an alkylene group, an alkenylene group or a phenylene group and may contain a carbonyl group, an ester group, an ether group or a hydroxy group; R<SP>3</SP>and R<SP>4</SP>are each an alkyl group and may contain a carbonyl group, an ester group or an ether group, or are each an aryl group, an aralkyl group or a thiophenyl group; and X<SP>-</SP>is an imidic acid anion or a methidic acid anion having at least one F atom. The resist material to which the acid generator of the polymer type sulfonium salt has been added excels particularly in resolution, has high sensitivity and ensures small line edge roughness. <P>COPYRIGHT: (C)2008,JPO&INPIT |
