发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 PROBLEM TO BE SOLVED: To provide a circuit which detects the reduction of a power voltage on the basis of a reference voltage. SOLUTION: The semiconductor integrated circuit includes: a first NMOS transistor inputting a divided voltage of the power voltage to a gate; a second NMOS transistor inputting the reference voltage to a gate; diode connected first and second PMOS transistors; a third PMOS transistor of which a gate is connected with that of the first PMOS transistor; a fourth PMOS transistor of which a gate is connected with that of the second PMOS transistor; a diode-connected third NMOS transistor; a fourth NMOS transistor of which a gate is connected with that of the third NMOS transistor; and a resistor, wherein a second terminal of the resistor is connected with a drain of the fourth PMOS transistor and a drain of the fourth NMOS transistor and a potential at the second terminal of the resistor is outputted, so that it is detected that the power voltage becomes lower than a predetermined value. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2007318770(A) 申请公布日期 2007.12.06
申请号 JP20070160030 申请日期 2007.06.18
申请人 FUJITSU LTD 发明人 TACHIBANA MASARU;KATO TATSUO;MORISHITA TOMONARI
分类号 H03K17/22;H01L21/822;H01L27/04 主分类号 H03K17/22
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