PLASMA DOPING METHOD AND APPARATUS

摘要

Plasma doping method and apparatus by which excellent implanting depth of an impurity introduced in a sample or excellent repeatability and controllability of an amorphous layer depth can be provided. In the plasma doping method, plasma is generated in a vacuum vessel, and a surface of a crystalline sample is changed to be in an amorphous state by permitting ions in the plasma to collide against the surface of the sample. The plasma doping method includes a step of treating a dummy sample to have it in an amorphous state by irradiating the sample with plasma, with a prescribed number of samples; and a step of applying a light on the dummy sample surface irradiated with the plasma and measuring optical characteristics of the dummy sample surface. The sample treating conditions are controlled so that the optical characteristics obtained by the measuring step are at desired values.