发明名称 SILICON PURIFICATION METHOD AND APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a silicon purification method comprising an efficient boron removal method for preparing solar cell-grade silicon and to provide a silicon purification apparatus. SOLUTION: Provided is a silicon purification method comprising melting crude silicon in a crucible placed in a melting furnace to remove impurities from the crude silicon, wherein in the crucible at least one boride object comprising a boride is in contact with the crude silicon containing an elementary metal identical with the metallic element constituting the boride, whereupon the B concentration in the metal-grade silicon can easily decrease to the B concentration in solar cell-grade silicon. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2007314403(A) 申请公布日期 2007.12.06
申请号 JP20060149016 申请日期 2006.05.29
申请人 SHARP CORP 发明人 NAKAMURA TSUNEO;OGAKI HISASHI;ANDO HIROYUKI;FUKUYAMA TOSHIAKI
分类号 C01B33/037 主分类号 C01B33/037
代理机构 代理人
主权项
地址