| 摘要 |
A semiconductor device includes an active region, a bulb recess with a certain depth formed in a channel-forming region of the active region, a device isolation structure encompassing the active region, wherein the device isolation structure has a line-shaped opening such that a surface of the device isolation structure is lower than the bottom of the bulb recess and a portion of the active region is protruded more than the device isolation structure in the shape of a saddle fin, a gate insulating layer formed over the device isolation structure exposed by the opening and the active region including the bulb recess, and a gate electrode formed over the gate insulating layer, the gate electrode filled in the bulb recess and covering the device isolation structure exposed by the opening.
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